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Competitive Analysis of Flash-Memory Algorithms

机译:闪存算法的竞争性分析

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The cells of flash memories can only endure a limited number of write cycles, usually between 10,000 and 1,000,000. Furthermore, cells containing data must be erased before they can store new data, and erasure operations erase large blocks of memory, not individual cells. To maximize the endurance of the device (the amount of useful data that can be written to it before one of its cells wears out), flash-based systems move data around in an attempt to reduce the total number of erasures and to level the wear of the different erase blocks. This data movement introduces interesting online problems called wear-leveling problems. We show that a simple randomized algorithm for one problem is essentially optimal. For a more difficult problem, we show that clever offline algorithms can improve upon naive approaches, but online algorithms essentially cannot.
机译:闪存单元只能承受有限数量的写周期,通常在10,000和1,000,000之间。此外,必须先擦除包含数据的单元,然后才能存储新数据,并且擦除操作将擦除大的存储器块,而不是单个单元。为了最大程度地提高设备的耐用性(在其中一个单元耗尽之前可以写入该设备的有用数据的数量),基于闪存的系统会四处移动数据,以减少擦除的总数并平整磨损不同的擦除块。这种数据移动引入了有趣的在线问题,称为磨损均衡问题。我们表明,针对一个问题的简单随机算法本质上是最佳的。对于一个更棘手的问题,我们证明了聪明的离线算法可以改进朴素的方法,但在线算法本质上不能。

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