首页> 外文会议>Advances in Resist Technology and Processing XXII pt.1 >Study and Control of the Interfacial Mass Transfer of Resist Components in 193nm Immersion Lithography
【24h】

Study and Control of the Interfacial Mass Transfer of Resist Components in 193nm Immersion Lithography

机译:193nm浸没式光刻技术中抗蚀剂组分界面传质的研究与控制

获取原文
获取原文并翻译 | 示例

摘要

The interfacial mass transfer issues of resist components in ArF immersion lithography were investigated both for topcoat resist system and for non-topcoat resist system. PAGs and photoacids are known for the major components that leach out from the resist to water and topcoat has been simply expected to shut off this leaching. In this study, topcoat layer was actually verified significantly to reduce the PAG leaching, but PAG (or photoacid) diffusion from the resist to topcoat was found as another issue. This resulted in T-top formation in the imaging due to the loss of photoacid nearby the resist surface caused by this diffusion. A material approach to reduce this interfacial diffusion was proposed through a thermodynamic consideration of the materials system. The free energy change for PAG-polymer solubilization is the key and the Solubility Parameter value was considered to represent a good measure of this free energy change. The experimental results well matched this analysis. On the other hand, a perfect suppression of the leaching without using topcoat would be more desirable if it is feasible. The influence of structural parameter of the resist component was investigated. The hydrophobicity of PAG was found to well correlate inversely to the leaching amount of the PAG into water, and thereby a technical guideline was obtained in designing resist materials to make them resistant to the leaching. By optimizing each resist component on this bases, we actually demonstrated a resist that showed the PAG leaching level reduced down to 10~(-13)[mol/cm~2], which we believe far below to what we are today with conventional dry resists. A resist sample was thus developed targeting the non-topcoat approach and was examined for its imaging performance with a realistic immersion lithography tool without using any topcoat. The resist actually showed good imaging results fully with the benefits that we expected with the immersion exposure.
机译:对于面漆抗蚀剂系统和非面漆抗蚀剂系统,都研究了ArF浸没式光刻胶中抗蚀剂组分的界面传质问题。 PAG和光酸的主要成分是从抗蚀剂中浸出到水中,而人们仅期望使用面漆来阻止这种浸出。在这项研究中,实际上已经验证了面漆层可以显着减少PAG的浸出,但是发现从抗蚀剂到面漆的PAG(或光酸)扩散是另一个问题。由于这种扩散导致光致抗蚀剂表面附近光酸的损失,导致在成像中形成T-top。通过对材料系统的热力学考虑,提出了一种减少这种界面扩散的材料方法。 PAG聚合物增溶的自由能变化是关键,而溶解度参数值被认为可以很好地衡量这种自由能变化。实验结果与该分析非常吻合。另一方面,如果可行的话,更希望在不使用面漆的情况下完全抑制浸出。研究了抗蚀剂组分的结构参数的影响。发现PAG的疏水性与PAG在水中的浸出量成反比良好,因此获得了设计抗蚀剂材料以使其对浸出具有抵抗力的技术指导。通过在此基础上优化每种抗蚀剂成分,我们实际上展示了一种抗蚀剂,其PAG浸出水平降低至10〜(-13)[mol / cm〜2],我们认为这远低于常规干燥条件下的今天水平抵抗。因此针对非面漆方法开发了抗蚀剂样品,并使用不使用任何面漆的现实浸没式光刻工具检查了其成像性能。实际上,该抗蚀剂具有良好的成像效果,并具有我们预期的浸没曝光所带来的好处。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号