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Backside EBR Process Performance with Various Wafer Properties

机译:具有各种晶圆特性的背面EBR工艺性能

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In immersion lithography process, film stacking architecture will be necessary to avoid top coat film peeling. To achieve suitable stacking architecture for immersion lithography process, an EBR process that delivers tightly controlled film edge position and good uniformity around the wafer circumference is needed.rnWe demonstrated a new bevel rinse system on a SOKUDO RF3 coat-and-develop track for immersion lithography. The performance of the new bevel rinse system for various wafer properties was evaluated. It was found that the bevel rinse system has a good controllability of film edge position and good uniformity around the wafer circumference. The results indicate that the bevel rinse system has a large margin for wafer centering accuracy, back side particles, wafer shape and substrates with good film edge position controllability, uniformity and clean apex. The system has been demonstrated to provide a suitable film stacking architecture for immersion lithography mass production process.
机译:在浸没式光刻工艺中,必须采用薄膜堆叠结构来避免面漆薄膜剥离。为了实现适用于浸没式光刻工艺的堆叠体系结构,需要一种EBR工艺,该工艺可提供紧密控制的薄膜边缘位置并在晶圆圆周周围保持良好的均匀性。rn我们在SOKUDO RF3涂布和显影轨道上展示了一种新型斜角冲洗系统,用于浸没式光刻技术。评估了新斜角冲洗系统对各种晶片性能的性能。已经发现,斜面冲洗系统具有良好的膜边缘位置可控性和围绕晶片圆周的良好均匀性。结果表明,斜角冲洗系统在晶圆对中精度,背面颗粒,晶圆形状和具有良好薄膜边缘位置可控性,均匀性和清洁顶点的基板方面具有很大的优势。该系统已被证明可为浸没式光刻的批量生产过程提供合适的薄膜堆叠架构。

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