首页> 外文会议>Advances in Resist Technology and Processing XI >Role of residual casting solvent in dissolution behavior of poly (3-methyl-4-hydroxystyrene) films
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Role of residual casting solvent in dissolution behavior of poly (3-methyl-4-hydroxystyrene) films

机译:残余浇铸溶剂在聚(3-甲基-4-羟基苯乙烯)薄膜溶解行为中的作用

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Abstract: Residual solvent present in resist films following spin casting can significantly influence dissolution behavior. We have used radiolabeling to measure solvent remaining in spin cast films after they have undergone various annealing protocols. Films of poly(3-methyl-4-hydroxystyrene) were found to contain a significant fraction of propylene glycol methyl ether acetate (as much as 50 percent by weight) depending on the annealing conditions. 1100 angstrom films contained a higher percentage of residual solvent than 1.2 $mu@m films. A diffusion plus evaporation model was used to deduce the diffusion coefficients of residual solvent as a function of film thickness and annealing temperature. We found that diffusion coefficients of residual solvent in 1100 angstrom polymer films are more than two orders of magnitude less than in 1.2 $mu@m thick films. !24
机译:摘要:旋涂后抗蚀剂膜中存在的残留溶剂会显着影响溶解行为。我们已经使用了放射标记技术来测量旋转浇铸膜中经过各种退火方案后残留的溶剂。根据退火条件,发现聚(3-甲基-4-羟基苯乙烯)薄膜含有很大一部分丙二醇甲醚乙酸酯(高达50重量%)。 1100埃薄膜所含的残留溶剂的百分数高于1.2μm薄膜。使用扩散加蒸发模型推导残留溶剂的扩散系数,该扩散系数是膜厚度和退火温度的函数。我们发现,在1100埃聚合物薄膜中,残留溶剂的扩散系数比在1.2微米厚度的薄膜中少两个数量级。 !24

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