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The application of Optical Resolution Enhancement Technology E-beam Direct Writing Technology in Micro-fabrication

机译:光学分辨率增强技术和电子束直写技术在微加工中的应用

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摘要

The Micro-processing & Nano-technology Laboratory at the Institute of Microelectronics, Chinese Academy of Sciences (CAS), is equipped with a GCA 3600F PG&3696 , a JBX 6AII & JBX 5000LS EB, and an ETEC MEBES 4700S EB. For a long time we have been engaged in the research and manufacture on Optical Resolution Enhancement Technology (RET) and E-Beam Direct Writing Technology. In this paper the following technologies will be described: PSM, OPC EBDW,EPC,Match & Mixed Lithography technology. Through the application of RET in optical lithography system, we completed the 0.2 um pattern with the g line and I line light source, which is the necessary preparation for 100nm node with 193nm light source. By means of match & mixed lithography and nanofabrication technology, 20nm-50nm gate CMOS transistor and 100364nm gate HEMT are successfully developed.
机译:中国科学院微电子研究所微处理与纳米技术实验室配备了GCA 3600F PG&3696,JBX 6AII&JBX 5000LS EB和ETEC MEBES 4700S EB。长期以来,我们一直致力于光学分辨率增强技术(RET)和电子束直写技术的研究与制造。本文将介绍以下技术:PSM,OPC EBDW,EPC,匹配和混合光刻技术。通过将RET应用于光学光刻系统中,我们完成了使用g线和I线光源的0.2um图案,这对于使用193nm光源的100nm节点是必要的准备。借助于匹配混合光刻技术和纳米制造技术,成功开发了20nm-50nm栅极CMOS晶体管和100364nm栅极HEMT。

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