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Preparation of Oriented Fe2O3 Film on Glass/Si Substrate by Atmospheric MOCVD

机译：大气MOCVD法在玻璃/硅衬底上制备取向Fe2O3薄膜

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《Advanced Materials and Processing》||3749-3752|共4页
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1. Preparation of well-aligned ZnO whiskers on glass substrate by atmospheric MOCVD [J] . Hongtao Yuan, Yao Zhang Journal of Crystal Growth . 2004,第1a4期

机译：大气MOCVD法在玻璃基板上制备取向良好的ZnO晶须
2. MOCVD of C-oriented Bi_2Te_3 Films on SiO_2 Substrates using Triethyl Bismuth and Di-tertiarybutyl Tellurium [J] . Sang-Woo Kang, Ki-Moon Jeon, Jae-Soo Shin, Chemical vapor deposition: CVD . 2013,第1a3期

机译：三乙基铋和二叔丁基碲用于SiO_2衬底上C取向Bi_2Te_3薄膜的MOCVD
3. Characterization Of Zno And Zno:al Films Deposited By Mocvd On Oriented And Amorphous Substrates [J] . Maria Elena Fragala, Graziella Malandrino Microelectronics journal . 2009,第2期

机译：Movvd在定向和非晶衬底上沉积的Zno和Zno：al膜的表征
4. Preparation of Oriented Fe_2O_3 Film on Glass/Si Substrate by Atmospheric MOCVD [C] . Jin Cheng, Yue Zhang Pacific Rim International Conference on Advanced Materials and Processing(PRICM 5) pt.5 . 2005

机译：大气MOCVD法在玻璃/硅衬底上制备取向Fe_2O_3薄膜
5. The Development of Novel-Single Source Precursors for the Growth of Zinc Oxide Thin Films via Atmospheric Pressure Metal Organic Chemical Vapor Deposition (AP-MOCVD) For Applications in Microelectronic Devices. [D] . Johnson, Keneshia Onekia. 2013

机译：通过大气压金属有机化学气相沉积（AP-MOCVD）开发用于氧化锌薄膜生长的新型单源前驱体，用于微电子器件。
6. Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates [O] . Minh D. Nguyen, Evert P. Houwman, Guus Rijnders -1

机译：在高度c轴取向的Pb（Zr0.52Ti0.48）O3薄膜中具有超低应变滞后的大压电应变并且在非晶玻璃基板上呈柱状生长
7. Effect of H2 on the microstructure and properties of TiO2 films grown by atmospheric pressure MOCVD on steel substrates [O] . Duminica Florin-Daniel, Maury Francis, Hausbrand R. 2009

机译：H2对大气压MOCVD在钢基底上生长的TiO2薄膜组织和性能的影响
8. Low-temperature MOCVD growth of oriented PbZrxTi1-xO3 thin films on Si substrates. [R] . Chen, N. 1998

机译：si衬底上取向pbZrxTi1-xO3薄膜的低温mOCVD生长。

Preparation of Oriented Fe2O3 Film on Glass/Si Substrate by Atmospheric MOCVD

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