Graduate School Materials Science in Mainz, 55128, Mainz, Germany,Institut fuer Physik, Johannes Gutenberg-Universitat, 55128, Mainz, Germany;
Institute of Problems of Chemical Physics, RAS, 142432 Chernogolovka, Russia;
Institut fuer Physik, Johannes Gutenberg-Universitat, 55128, Mainz, Germany;
Institute of Problems of Chemical Physics, RAS, 142432 Chernogolovka, Russia;
Institute of Problems of Chemical Physics, RAS, 142432 Chernogolovka, Russia;
Institute of Problems of Chemical Physics, RAS, 142432 Chernogolovka, Russia;
Institut fuer Physik, Johannes Gutenberg-Universitat, 55128, Mainz, Germany;
Institut fuer Physik, Johannes Gutenberg-Universitat, 55128, Mainz, Germany;
Charge-Transfer Salts; Antiferromagnetism; DOEO; SQUID; phase diagram;
机译:(DOEO)_4 [HgBr_4]?的电子和磁性的温度依赖性? TCE单晶
机译:四元稀磁半导体Cd_(0.63-y)Mn_(0.37)Hg_yTe单晶的温度和结构力学性能的成分依赖性
机译:双钙钛矿La_(2_x)Sr + xCoIrO_6(0≤x≤2)的晶体结构和磁电子性质的温度和组成依赖性
机译:(DOEO)_4 HGBR_4·TCE单晶的电子和磁性的温度依赖性
机译:锑化铁(FeSb2)单晶的合成,表征以及低温电子和磁性。
机译:温度感应的单晶到单晶磁特性发生相应变化的变换Fe(III)配合物
机译:电子和磁性的温度依赖性 (DOEO)$ _ 4 $ [HgBr $ _4 $] TCE单晶
机译:单晶Updsn中磁性顺序的温度依赖性。