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Synthesis, characterization, and low temperature electronic and magnetic properties of iron antimonide (FeSb2) single crystals.

机译:锑化铁(FeSb2)单晶的合成,表征以及低温电子和磁性。

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摘要

The narrow band gap semiconductor iron antimonide, FeSb2, has been grown as bulk single crystals, and investigated for its electronic and magnetic properties at low temperatures. The electronic behavior of FeSb 2 is associated with strong electron correlations, similar to the characteristic behavior observed in FeSi, another strongly correlated d-electron correlated semiconductor. Recent studies found an enhancement of the Seebeck coefficient and thermopower, two key parameters in thermoelectric performance, at temperatures below 77K, making FeSb2 potentially useful in cryogenic Peltier-cooling applications below liquid nitrogen temperatures. Crystals with sizes of 1.5-5.0mm are grown using three different synthesis approaches: chemical vapor-phase transport (CVT), using either chlorine (Cl 2(g)) or iodine (I2(g)) as transporting agents, and molten flux growth using excess antimony (Sb). Single crystal and powder x-ray diffraction experiments on select samples provided for structural phase identification and confirmed the absence of secondary impurity phases. FeSb2 crystallizes in the FeS2-marcasite structure type, featuring FeSb6 edge-sharing octahedra forming chains along the c-axis and corner-sharing in the a-b plane. The crystal surfaces were characterized using SEM-EDS and AFM measurements, revealing the characteristic morphological features resulting from CVT growth, as well as helping to identify surface contamination. Magnetic susceptibility measurements show weak temperature induced paramagnetism above 50K , with the diamagnetic-to-paramagnetic crossover above 100K. Temperature-dependent electronic transport properties, ρ(T), showed semiconducting behavior and the formation of a resistivity plateau between 10K-40K, corresponding to a secondary transport gap, ϵg, of about 3.9-7.2meV, similar in magnitude and in accordance to previous studies on FeSb2. Hybridization between iron (Fe)3d and antimony (Sb) 5p and 5s valence states appears to be responsible for complex electronic behavior at low temperatures, with the formation of a small secondary gap. Earlier studies have shown a significant enhancement of the Seebeck coefficient (thermopower) at the onset of this gap (10K-12K). Thermopower measurements in our sample also show peak values around this temperature, but the maximum values are several orders of magnitude lower than previous reports, while magnetic and electronic properties are in good agreement.
机译:窄带隙半导体锑化铁FeSb2已作为块状单晶生长,并在低温下研究了其电子和磁性。 FeSb 2的电子行为与强电子相关性相关,类似于在另一个紧密相关的d电子相关半导体FeSi中观察到的特征行为。最近的研究发现,在温度低于77K时,热电性能的两个关键参数塞贝克系数和热功率都有所提高,使得FeSb2可能在液氮温度以下的低温珀尔帖冷却应用中有用。使用三种不同的合成方法来生长1.5-5.0mm大小的晶体:化学气相传输(CVT),使用氯(Cl 2(g))或碘(I2(g))作为传输剂以及熔融助熔剂使用过量锑(Sb)的生长。对选定样品进行的单晶和粉末X射线衍射实验可用于结构相鉴定,并证实了不存在次级杂质相。 FeSb2结晶为FeS2-马氏体结构类型,其特征为FeSb6沿c轴共享边沿八面体形成链,并在a-b平面中共享角共享。使用SEM-EDS和AFM测量对晶体表面进行了表征,揭示了CVT生长导致的特征形态特征,并有助于识别表面污染。磁化率测量结果表明,温度引起的顺磁性弱于50K,而抗磁至顺磁性的交叉则高于100K。与温度有关的电子传输特性ρ(T)显示出半导体行为,并在10K-40K之间形成了一个电阻率平稳区,对应于大约3.9-7.2meV的二次传输间隙ϵ g,其幅值和幅度相似根据先前关于FeSb2的研究。铁(Fe)3d与锑(Sb)5p和5s价态之间的杂化似乎是造成低温下复杂的电子行为的原因,并且形成了小的次级间隙。较早的研究表明,在出现这种间隙(10K-12K)时,塞贝克系数(热功率)显着提高。我们的样本中的热功率测量值也显示了该温度附近的峰值,但是最大值比以前的报告低了几个数量级,而磁性能和电子性能非常一致。

著录项

  • 作者

    Vasquez Lombardo, Rafael.;

  • 作者单位

    The Florida State University.;

  • 授予单位 The Florida State University.;
  • 学科 Physics Low Temperature.;Engineering Materials Science.
  • 学位 M.S.
  • 年度 2012
  • 页码 122 p.
  • 总页数 122
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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