GaInP single-junction and GaInP/GaAs two-junction thin-film solar cellstructures by epitaxial lift-off

摘要

The epitaxial life-off (ELO) technique was applied to fabricate a GaInP/GaAs two-junction monolithic tandem solar cell structure. Previously reported thin-film cells formed by ELO are mainly restricted to the GaAs-based material system and a single-junction structure. To attain light weight and high conversion efficiency, a thin-film tandem cell including GaInP material system is indispensable. In the present paper, a thin-film GaInP single-junction solar cell and a thin-film GaInP/GaAs monolithic tandem structure formed by ELO were studied. Performance of the single-junction GaInP cell and constituent cells in the GaInP/GaAs tandem structure were evaluated, and it was found that response degradation caused by damage in the ELO process was small.