首页> 外文会议>9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy >The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering
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The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering

机译:反应磁控溅射制备掺Do纳米晶硅薄膜的结构和光致发光

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摘要

Nanocrystalline containing Si thin films undoped and doped with erbium were produced by reactive RF sputtering method. Detailed investigations on the complex structure of the films including the analysis of "anatomy" of the films, their chemical composition, nc size and volume fraction, as well as the allocation of SiO and/or SiO_2 phases are presented. The correlation between the films microstructure and their photoluminescence properties in visible and 1.54 μm wavelength regions is discussed.
机译:通过反应性射频溅射法制备了未掺杂和掺杂的含硅纳米晶薄膜。提出了对膜的复杂结构的详细研究,包括对膜的“解剖学”,其化学组成,nc尺寸和体积分数以及SiO和/或SiO_2相的分配的分析。讨论了在可见光和1.54μm波长范围内膜的微观结构与其光致发光性能之间的相关性。

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