Monitoring of Defects in Thermal Oxides during Electrical Stress

摘要

A detailed monitoring of stressed thermal oxide designed for Flash memories application is reported. The samples were stressed through a constant current injection and characterized by current-voltage and capacitance-voltage measurements at different steps of degradation. Low-frequency capacitance measurements under substrate accumulation have been also performed and interpreted by a model which takes into account the contribution to capacitance given by trapped charge moving between defects under a small signal perturbation. Results obtained in deposited oxide are also reported.