Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon

摘要

Formation processes of thermal donors in Czochralski grown silicon with Ge impurity subjected to heat treatment at T=450℃ at atmospheric pressure and a high hydrostatic pressure of P=l Gpa are investigated. Ge impurity can suppress the formation of Thermal Double Donors in Cz-Si heat treated under normal conditions. It has been shown that the Compressive stress applied during heat treatment to Cz-Si with high concentrations of this isoelectronic impurity gives rise to an enhanced formation of thermal donors. This effect is thought to be associated with increasing oxygen diffusivity under stress. A comparison with the formation processes of thermal donors in conventional Cz-Si heat treated with and without hydrostatic pressure is also drawn.