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Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

机译：通过快速热退火预处理的锗掺杂Czochralski硅中热供体的增强形成

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Xin Zhu; Deren Yanga; Ming Li; Can Cui; Lei Wang; Xiangyang Ma;
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1. Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing [J] . Xin Zhu, Deren Yanga, Ming Li, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第0期

机译：快速热退火预处理的掺锗切克劳斯基硅中热供体的形成增强
2. Internal gettering for germanium-doped Czochralski silicon: Treated by rapid-thermal-anneal based processing simulation [J] . Jiahe Chen, Deren Yang, Xiangyang Ma, Materials Science and Engineering . 2009,第期

机译：掺锗的切克劳斯基硅的内部吸杂：通过基于快速热退火的处理仿真处理
3. Rapid-thermal-anneal-based Internal Gettering For Germanium-doped Czochralski Silicon [J] . Jiahe Chen, Deren Yang, Xiangyang Ma, Applied Physics . 2009,第4期

机译：基于快速热退火的内部吸杂锗掺杂的直拉硅
4. Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing [C] . Xin Zhu, Deren Yang, Ming Li, International Autuman Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2008

机译：通过快速热退火，增强锗掺杂Czochralski硅的热吹塑器的形成
5. A deep-submicron single gate CMOS technology using in-situ boron-doped polycrystalline silicon-germanium gates formed by rapid thermal chemical vapor deposition [D] . Li, Vivian Zhi-Qi 1997

机译：一种深亚微米单栅极CMOS技术，使用通过快速热化学气相沉积形成的原位掺杂硼的多晶硅锗锗栅极
6. Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix [O] . Zhenyu Wan, Shujuan Huang, Martin A Green, 2011

机译：碳化硅基体中硅纳米晶的快速热退火和结晶机理研究
7. Formation of highlyn‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide [O] . D. K. Sadana, J. P. de Souza, F. Cardone 1991

机译：通过快速热氧化形成高掺杂的砷化镓层，然后通过硅封镓砷化镓快速热退火

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

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