Effect of Sc doping on the electron emission properties of an MgO protective layer

机译：Sc掺杂对MgO保护层电子发射性能的影响

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Study of the ion-induced-, photo- and exo-electron emission from a Sc doped MgO protective layer has been performed. It is established that doping with Sc increases photo- and especially exo- electron emission from MgO films while the ion-induced electron emission coefficient γ stays unchanged.

机译：已经研究了掺杂Sc的MgO保护层的离子诱导的，光电子和外电子的发射。已经确定，用Sc掺杂会增加MgO薄膜的光电子发射，特别是外电子发射，而离子诱导的电子发射系数γ保持不变。

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来源
《IMID/IDMC/ASIA DISPLAY 2008;International display manufacturing conference 2008;International meeting on information display;Asia display 2008 》|2008年|p.1057-1059|共3页
会议地点 Ilsan(KR);Ilsan(KR);Ilsan(KR);Ilsan(KR)
作者
Y. T. Matulevich; Min-Suk Lee; Sung-Hwan Moon; Jong-Seo Choi; Dong-Sik Zang;
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作者单位

Material Laboratory, Corporate RD center, Samsung SDI, 428-5, Gongse- dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-577, Korea Phone:+82-31-2884616, E-mail: yury.matulevich@samsung.com;

rnMaterial Laboratory, Corporate RD center, Samsung SDI, 428-5, Gongse- dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-577, Korea;

rnMaterial Laboratory, Corporate RD center, Samsung SDI, 428-5, Gongse- dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-577, Korea;

rnMaterial Laboratory, Corporate RD center, Samsung SDI, 428-5, Gongse- dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-577, Korea;

rnMaterial Laboratory, Corporate RD center, Samsung SDI, 428-5, Gongse- dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-577, Korea;

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会议组织
原文格式 PDF
正文语种 eng
中图分类显示技术 ; 显示设备、显示器 ;
关键词
exoelectron emission; photoemission; scandium; MgO;

机译：外电子发射光发射钪;氧化镁;

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1. Analysis of secondary electron emission properties of MgO/Au composite film with an Al-doped MgO surface layer [J] . Buyu Gao, Jie Li, Wenbo Hu, AIP Advances . 2018 ,第11期

机译：掺铝MgO表面层的MgO / Au复合膜的二次电子发射特性分析
2. Effects of Sc- and Zr-doped MgO layers on electron emission and discharge characteristics of alternating-current plasma display panels [J] . Eun Young Jung, Choon-Sang Park, Tae Eun Hong, Japanese journal of applied physics . 2014 ,第3期

机译：掺Sc和Zr的MgO层对交流等离子体显示面板电子发射和放电特性的影响
3. Ion-Induced Secondary Electron Emission Coefficient (γ) from MgO Protective Layer with Microscopic Surface Structures in Alternating Current Plasma Display Panels [J] . Jun Seok Oh, Eun Ha Choi Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2004 ,第9AB期

机译：交流等离子显示面板中具有微观表面结构的MgO保护层的离子诱导二次电子发射系数（γ）
4. Effect of Sc doping on the electron emission properties of an MgO protective layer [C] . Asia display . 2008

机译：SC掺杂对MgO保护层电子发射性能的影响
5. Emissive Properties of Nano-Layered Aluminum Doped Zinc Oxide [D] . Zarate, Evan Dennis. 2017

机译：纳米层掺杂铝的氧化锌的发光性质
6. Au Doping Effect on the Secondary Electron Emission Performance of MgO Films [O] . Jie Li, Wenbo Hu, Kang Wang, 2018

机译：金掺杂对MgO薄膜二次电子发射性能的影响
7. Analysis of secondary electron emission properties of MgO/Au composite film with an Al-doped MgO surface layer [O] . Buyu Gao, Jie Li, Wenbo Hu, 2018

机译：用Al掺杂MgO表面层分析MgO / Au复合膜的二次电子发射性能

Effect of Sc doping on the electron emission properties of an MgO protective layer

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