...
首页> 外文期刊>Japanese journal of applied physics >Effects of Sc- and Zr-doped MgO layers on electron emission and discharge characteristics of alternating-current plasma display panels
【24h】

Effects of Sc- and Zr-doped MgO layers on electron emission and discharge characteristics of alternating-current plasma display panels

机译:掺Sc和Zr的MgO层对交流等离子体显示面板电子发射和放电特性的影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

To improve the material properties of a protective layer for alternating-current plasma display panels, a small amount of Sc or Zr was added to a conventional MgO protective layer. The electrical properties and surface characteristics of the Sc and Zr doped MgO protective layers deposited by an ion plating method were investigated. Experimental results show that the secondary electron emission coefficients of the Sc and Zr MgO protective layers are higher than those of conventional MgO protective layers, resulting in the reductions in firing voltage and address discharge delay time. To elucidate the reason for the increase in secondary electron emission, the changes in work function and energy band structure were investigated by cathodoluminescence (CL) measurement and ultraviolet photoelectron spectroscopy (UPS). The measurements show that the work functions of the Sc and Zr MgO protective layers markedly decreased in comparison with that of the conventional MgO protective layer. Experimental results reveal that the secondary electron emission has a strong correlation with the change in work function or energy band structure that is related to the defect level produced by doping, thereby resulting in changes in electrical discharge voltage and delay time.
机译:为了改善用于交流等离子体显示面板的保护层的材料性能,将少量的Sc或Zr添加到常规的MgO保护层中。研究了通过离子镀法沉积的掺Sc和Zr的MgO保护层的电性能和表面特性。实验结果表明,Sc和Zr MgO保护层的二次电子发射系数高于常规MgO保护层的二次电子发射系数,从而降低了点火电压和寻址放电延迟时间。为了阐明二次电子发射增加的原因,通过阴极发光(CL)测量和紫外光电子能谱(UPS)研究了功函数和能带结构的变化。测量表明,与常规的MgO保护层相比,Sc和Zr MgO保护层的功函数显着降低。实验结果表明,二次电子发射与功函数或能带结构的变化具有很强的相关性,而功函数或能带结构的变化与掺杂产生的缺陷水平有关,从而导致放电电压和延迟时间的变化。

著录项

  • 来源
    《Japanese journal of applied physics》 |2014年第3期|036002.1-036002.4|共4页
  • 作者单位

    Core Technology Lab., Corporate R&D Center, Samsung SDI Co., Ltd., Cheonan, Chungnam 330-300, Republic of Korea;

    Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies (COMSET),Clemson University, Clemson, SC 29634, U.S.A.;

    Busan Center, Korea Basic Science Institute, Busan 610-230, Republic of Korea;

    Department of Physics, Kyungpook National University, Daegu 702-701, Republic of Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号