Fabrication of excimer laser annealed poly-Si thin film transistor usingpolymer substrates

机译：使用聚合物衬底制造准分子激光退火的多晶硅薄膜晶体管

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In this paper, the characteristics ofrnpolycrystalline silicon thin-film transistors (poly-rnSi TFTs) fabricated on polymer substrates arerninvestigated. The a-Si films was laser annealed byrnusing a XeCl excimer laser and a four-maskprocessedrnpoly-Si TFT was fabricated with fullyrnself-aligned top gate structure. The fabricatedrnnMOS TFT showed field-effect mobility of ～30rncm2/Vs, on/off ratio of 105 and threshold voltagernof 5 V.

机译：本文研究了在聚合物衬底上制造的多晶硅薄膜晶体管（poly-SiSi TFTs）的特性。通过使用XeCl准分子激光器对a-Si膜进行激光退火，并制造了具有完全自对准顶栅结构的四掩膜处理的poly-Si TFT。制作的nMOS薄膜晶体管的场效应迁移率为〜30rncm2 / Vs，通/断比为105，阈值电压为5V。

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《The 6th International Meeting on Information Display and the 5th International Display Manufacturing Conference (IMID/IDMC 2006)》|2006年|1162-1165|共4页
会议地点 Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR)
作者
Soo-Hee Kang; Yong-Hoon Kim; Jin-Woo Han; Dae-Shik Seo; Jeong-In Han;
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Information Display Research Center,Korea Electronics Technology Institute,rn68 Yatap-dong,Bungdang-gu,Seongnam-si,Gyeonggi-do,463-816,Korea Department of Electrical and Electronics engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120-749,Korea;

Information Display Research Center,Korea Electronics Technology Institute,68 Yatap-dong,Bungdang-gu,Seongnam-si,Gyeonggi-do,463-816,Korea;

Department of Electrical and Electronics engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120-749,Korea;

Department of Electrical and Electronics engineering,Yonsei University,134 Shinchon-Dong,Seodaemun-Gu,Seoul 120-749,Korea;

Information Display Research Center,Korea Electronics Technology Institute,68 Yatap-dong,Bungdang-gu,Seongnam-si,Gyeonggi-do,463-816,Korea Phone: +82-31-7;

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专利

1. Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size [J] . Yang P.-C., Kuo P.-S., Lee S.-C. IEEE Transactions on Electron Devices . 2008,第8期

机译：通过准分子激光退火制备的多通道多晶硅薄膜晶体管，其通道宽度与晶粒尺寸相当或更小
2. Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure [J] . Yong-Hae Kim, Chi-Sun Hwang, Yoon-Ho Song, Thin Solid Films . 2003,第1a2期

机译：具有自对准轻掺杂漏极结构的受激准分子激光退火的多晶硅薄膜晶体管
3. Poly-Si thin film transistors fabricated by combining excimer laser annealing and metal induced lateral crystallization [J] . Park KC., Lee JH., Song IH., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta2期

机译：结合准分子激光退火和金属诱导的横向结晶制造的多晶硅薄膜晶体管
4. Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates [C] . International Display Manufacturing Conference . 2006

机译：使用聚合物基材的准分子激光退火多Si薄膜晶体管的制造
5. Crystalline silicon thin films for thin-film transistor applications via excimer laser irradiation. [D] . Sposili, Robert Stephen. 2001

机译：通过准分子激光辐照用于薄膜晶体管的晶体硅薄膜。
6. Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors [O] . Kyungsoo Jang, Youngkuk Kim, Joonghyun Park, 2019

机译：准分子激光晶体化的Si1-xGex薄膜晶体管的电学和结构特性
7. Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication [O] . Chao-Nan Chen, Jung-Jie Huang 2015

机译：准分子激光退火对低温溶液基氧化铟薄膜晶体管制备的影响
8. Excimer Laser Crystallization of Silicon Films: Artificially-Controlled Super Lateral Growth for Grain Boundary Location-Controlled and Single Crystal Island Materials for Thin Film Transistor Applications [R] . Im, J. S. , Sposili, R. S. 1998

机译：硅薄膜准分子激光晶化：用于薄膜晶体管应用的晶界限位和单晶岛材料的人工控制超横向生长

Fabrication of excimer laser annealed poly-Si thin film transistor usingpolymer substrates

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