Introduction: Flexible and transparent resistive memory devices have been widely investigated due to their potential use in wearable electronics. The mechanism of resistive memory is controlled by the formation and rupture of the conducting filament inside the storage layer. ZnO is one of the most promising storage layer materials for fabricating such memory devices;ZnO is highly transparent in visible light, low cost and environment-friendly.Various device design and techniques have been proposed in order to improve the ZnO-based resistive memory.4However, based on our knowledge, the importance of sputtering pressure as a processing parameter in fabricating the memory device is still overlooked. In this work, we found that the switching characteristics are significantly influenced by the sputtering pressure.
展开▼
