首页> 外文会议>The 66th Electronic Components and Technology Conference >Novel W2W/C2W Hybrid Bonding Technology with High Stacking Yield Using Ultra-Fine Size, Ultra-High Density Cu Nano-Pillar (CNP) for Exascale 2.5D/3D Integration
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Novel W2W/C2W Hybrid Bonding Technology with High Stacking Yield Using Ultra-Fine Size, Ultra-High Density Cu Nano-Pillar (CNP) for Exascale 2.5D/3D Integration

机译:新颖的W2W / C2W混合键合技术,使用超细尺寸,超高密度Cu纳米柱(CNP)实现高堆积产量,用于Exascale 2.5D / 3D集成

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摘要

We propose a novel hybrid bonding technology with a high stacking yield using ultra-high density Cu nano-pillar (CNP) for exascale 2.5D/3D integration. To solve the critical issues of current standard hybrid bonding technology, we developed scaled electrodes with slightly extruded structure and unique adhesive layer of anisotropic conductive film composed of untra-fine size, ultra-high density CNP. Multi-number of TEG dies with 7mm x 23mm size are bonded to an interposer wafer by a new hybrid bonding technology. A huge number of electrodes of 4,309,200 composed of scaled electrodes with 3μm diameter and 6μm pitch are formed in each TEG die. We confirmed for the first time that 4,309,200 electrodes per die are successfully connected in series with the joining yield of 100% due to ultra-high density CNP.
机译:我们提出了一种新颖的混合键合技术,该技术使用超高密度铜纳米柱(CNP)进行百亿分之2.5D / 3D集成,具有很高的堆叠产量。为了解决当前标准混合键合技术的关键问题,我们开发了具有轻微挤压结构的可缩放电极以及由超细尺寸,超高密度CNP组成的各向异性导电膜独特的粘合层。通过一种新的混合键合技术,将多个尺寸为7mm x 23mm的TEG芯片键合到插入式晶圆上。在每个TEG芯片中形成了数量庞大的4,309,200个电极,这些电极由直径为3μm和节距为6μm的缩放电极组成。我们首次确认,由于超高密度的CNP,每个管芯成功地串联连接了4,309,200个电极,连接产率为100%。

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