Detection and Identification of Organic Contamination on Silicon Substrates

摘要

Organic contamination adsorbed on 200 mm silicon wafers was characterized using various analytical techniques. Surface hydrophobicity and apparent optical thickness only give information on total organic contamination. MIR-FTIR is very sensitive for detecting CH_2 and CH_3 contained in organics deposited on silicon wafers. TOF-SIMS is quite sensitive and enables some of the organics to be recognized by identifying the molecule fragments. TD-GC-MS is the most relevant technique to identify organic contamination on silicon wafers as extensive identification libraries exist.