Evaluation method of a silicon substrate, the manufacturing method of the contamination detection methods and the epitaxial substrate

摘要

PROBLEM TO BE SOLVED: To provide a method of evaluating a silicon substrate, in which a metal impurity concentration in the substrate is accurately evaluated with high sensitivity by suppressing recombination on a substrate surface more than before.;SOLUTION: The method of evaluating the silicon substrate, in which metal contamination of the silicon substrate is evaluated in a microwave photoconductive decay method minority carrier lifetime method, is characterized by measuring a wafer lifetime value in the silicon substrate by injecting carriers at 1×10¹² to 1×10¹³ Photons/cm² when the silicon substrate is a P-type silicon substrate or at 1×10¹⁴ to 5×10¹⁴ Photons/cm² when the silicon substrate is an N-type silicon substrate for microwave photoconductive decay method minority carrier excitation after forming a passivation film by chemical passivation method on the surface of the silicon substrate.;COPYRIGHT: (C)2010,JPO&INPIT