Preliminary Results of Numerical Profiles for the Simultaneous Diffusion of Boron and Point Defects in Silicon using Irreversible Thermodynamic Theory

摘要

The irreversible thermodynamics theory is developed and applied for the discussion of the simultaneous diffusion of boron and point defect in silicon semiconductor. The simultaneous diffusion fluxes of boron and point defect are given for numerical solution of profiles based on the given constraints and assumptions. Using the irreversible thermodynamics theory the preliminary numerical distributions of boron, self si interstitial and vacancy depending on diffusion temperature and the fractions of vacancy and interstitial diffusion mechanism in dual diffusion mechanism or interstitialcy mechanism were calculated on PC using the finite differences method and Pascal language. The preliminary calculated results are presented.