The Fabrication and SEM Analysis of MEMS Sensor Chip on the Si-surface Modified by Porous Al2O3

摘要

The Si-surface of MEMS sensor based on Si is too smooth to combine with the sensitive material, making it difficult to produce the MEM gas sensor, in this paper, aimed at the problem, a method od porous Al2O3 modifing the Si-sufface is proposed to solve this problem. A layer of aluminum film is formed on the Si-surface through the magnetron sputtering technique, then porous microstructure Al2O3 ceramic film is fabricated by the electrochemical anodic oxidation, and the composite semiconductor gas-sensing material of polyaniline and hexadecachloro zinc phthalocyanine (ZnPcCl16) is permeated in the holes of the film by chemical synthesis. In this paper, the SEM morphologies of porous Al2O3 ceramic film, the section of Si substrate and gas-sensing material permeated .in the holes are analyzed, and the best technological parameters are obtaned.