Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

摘要

Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.