Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic;
Brno University of Technology, Brno, Czech Republic;
Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic;
Central European Institute of Technology, Brno University of Technology, Brno, Czech Republic;
Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna, Austria;
Etching; Silicon; Bottling; Surface roughness; Corrugated surfaces;
机译:使用ICP低温反应离子刻蚀工艺对硅进行浅而深的干法刻蚀
机译:使用ICP低温反应离子刻蚀工艺对硅进行浅而深的干法刻蚀
机译:深度反应离子蚀刻参数对具有高纵横比极深硅蚀刻工艺蚀刻速率和表面形态的影响:
机译:片上储能的低温深反应离子蚀刻工艺优化
机译:能源商品的风险管理-灵活燃料工艺和能源商品存储的能源交换评估和优化
机译:低温和博世深反应离子蚀刻的元表面制造
机译:聚焦离子束与低温深反应离子刻蚀相结合的纳米制造工艺的表征