Effect of Heavy Doping on Dark Conductivity of TBP Doped n-Type a-Si:H Films

摘要

The temperature dependence of dc dark conductivity has been examined in n-type tertiarybutylphosphine (TBP) doped a-Si:H films deposited by glow discharge technique. The conductivity of doped a-Si:H is observed to be very sensity to the rate at which the sample is cooled following a high temperature anneal. The conductivity is found to be thermally activated. The Arrhenius plots of the conductivity Vs temperature show a kink at a particular temperature which varies with the doping concentration. At higher doping levels TBP/SiH_4=3 percent), the kink disappears probably due to thermal stability of the films.