Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories

摘要

Fowler-Nordheim erase in Flash Memories is intrinsically affected by the erratic phenomenon whose origin has physical aspects that are still obscure. This work presents new experimental results showing the impact of the oxide thickness on the erratic erase during cycling. The collected statistical results play a key role for the study of the charging/discharging properties of tunneling oxides.