In-line Defect to Bitmap Signature Correlation: A Shortcut to Physical FA Results

摘要

Results from correlation of electrical bitmaps to optically detected in-line defects can provide insight into physical failure mechanisms usually acquired by physical FA. If the bitmaps are classified, two-way correlation can be performed: in-line defect to bitmap failure, as well as bitmap signature to in-line defect. Results from an advanced DRAM design were analyzed to demonstrate the type of conclusions about failure mechanisms that result from this method. These results also demonstrate the value of analyzing memory devices failures, even those that can be repaired, to gain understanding of defect mechanisms.