首页> 外文会议>26th International Conference on the Physics of Semiconductors Jul 29-Aug 2, 2002 Edinburgh, UK >Cyclotron resonance in InGaAs/AlAs superlattices underpulsed high magnetic fields
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Cyclotron resonance in InGaAs/AlAs superlattices underpulsed high magnetic fields

机译:InGaAs / AlAs超晶格中回旋加速器在强脉冲磁场作用下的共振

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We have carried out cyclotron resonance (CR) measurement in InGaAs/AlAsrnsuperlattices (SLs) under pulsed high magnetic fields to evaluate the effective mass ofrnelectrons. Clear CR signals were observed in the transmission from a far-infrared laser atrnroom temperature. We obtained that the cyclotron mass of (InGaAs)n/(AlAs)n SLs withrnn=6~12 monolayer in the parallel direction to the SL heterointerface are 0.073~0.080m0.rnBy comparing with result of GaAs/AlAs SLs, the observed signals suggest that Γ-X crossoverrnin the (InGaAs)n/(AlAs)n SLs occurs at around n=6 monolayer. We have also performed CRrnmeasurement to tilt the samples for different angle μ between the magnetic field and the normalrnto the SL heterointerface. A deviation of the CR peak position from a simple cos θ-dependencernwere observed, which suggested the Landau-level-miniband mixing in the SL under magneticrnfield.
机译:我们已经在脉冲强磁场下对InGaAs / AlAsrn超晶格(SLs)进行了回旋共振(CR)测量,以评估电子的有效质量。在远红外激光室温下的传输中观察到清晰的CR信号。得出在平行于SL异质界面的方向上具有nn = 6〜12单层的(InGaAs)n /(AlAs)n SLs的回旋质量为0.073〜0.080m0.rn与GaAs / AlAs SLs的结果相比,观察到的信号这表明(InGaAs)n /(AlAs)n SL中的Γ-X交叉发生在n = 6单层附近。我们还进行了CRrn测量,以使样本倾斜磁场和SL异质界面的法线之间的不同角度μ。观察到CR峰值位置与简单cosθ相关性的偏差,这表明在磁场下SL中的Landau级微带混合。

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