Experimental and Theoretical Studies of CarrierLateral Transport in Small (3-0.2 μm) Mesas with Self-Organized Quantum Dots

摘要

Experimental and theoretical study is made ofrnphotoluminescence (PL) from 3-0.2 μm mesa arrays with InAs-GaAsrnquantum dots. A bright PL at 300 K is observed even for the smallestrn0.2 μm mesas. The strong PL from mesas is explained by very fast carrierrncapture into quantum dots and their efficient localization. The fraction ofrncarriers in the wetting layer and the GaAs matrix, which can laterallyrndiffuse towards processed surface, is shown to be small resulting in arnweak surface recombination.