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Analog Design in Deep Sub-Micron CMOS

机译:深亚微米CMOS中的模拟设计

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摘要

Analog design in deep sub-micron technologies is a reality now and poses severe challenges to the circuit designer. Trends in technologies as well as circuit design are discussed. It is shown that the power required for a certain dynamic range and bandwidth decreases with minimum feature size as long as a constant ratio between signal swing and supply voltage can be maintained. Below 0.1um channel-length, predictions of the threshold voltage endanger that requirement however. At circuit level, the problem that a low supply voltage poses on the use of switches and amplifiers is discussed. Various techniques are discussed to overcome these problems, like the use of low V_(th) transistors, clock boosting, switched OpAmp technique, rail-to-rail input stages, back-gate driving circuits and CM level-shift techniques. Based on power estimates, the necessity of matching enhancing techniques like Auto-Zero techniques and Averaging is shown.
机译:深亚微米技术中的模拟设计现已成为现实,并给电路设计人员带来了严峻的挑战。讨论了技术发展趋势以及电路设计。结果表明,只要可以保持信号摆幅和电源电压之间的恒定比率,则特定动态范围和带宽所需的功率就会以最小的特征尺寸减小。通道长度低于0.1um时,阈值电压的预测危及该要求。在电路级,讨论了使用开关和放大器时电源电压低的问题。讨论了各种技术来克服这些问题,例如使用低V_th晶体管,时钟升压,开关式运算放大器技术,轨到轨输入级,背栅驱动电路和CM电平移位技术。基于功率估计,显示了匹配增强技术(如自动归零技术和平均)的必要性。

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