The study of intrinsic a-SiOx:H materials used as wide-band gap absorber in thin film solar cells

摘要

In this paper,a-SiOx:H materials have been prepared by VHF-PECVD and characterized in terms of optical,electrical and structural properties.The influences of the flow ratio of CO2/SiH4,the glow power,the deposition pressure and the temperature of substrate have been investigated synthetically.The relationship between deposition process and the properties has been discussed.After the optimization,the a-SiOx:H material with relatively good optoelectronic properties is used as absorber in the tentative fabrication of single junction solar cells.The preliminary result shows the open-circuit voltage has been improved effectively compared to that of a-Si:H.