CdZnTe as a Wide-Band-Gap Absorber for a Tandem, Thin-Film Solar Cell: Final Subcontract Report, 1 April 1986-31 August 1987

摘要

The objective of this program was to prepare by low-cost ultra-high-vacuum (uhv) methods on all-thin-film (approximately 1.6 eV) wide-bandgap solar cell using CdZnTe as the absorber layer. ZnTe/CdZnTe/n-CdS/ITO/glass structures were prepared by congruent evaporation in uhv. Ohmic contact to the ZnTe with HgZnTe and conversion of the high-resistivity ZnTe and CdZnTe was simultaneously undertaken by the closed-space vapor deposition of HgZnTe. Mesa structures did not show blocking action. Single-crystal cells were prepared by the deposition of CdS on bulk p-CdTe and thin-film, single-crystal p-CdTe-on-sapphire and p-CdZnTe-on-sapphire. A comparison of results suggests that the all-thin-film polycrystalline structure is limited by the CdZnTe. 6 refs., 4 figs., 1 tab. (ERA citation 13:017973)