Microcrystalline silicon-germanium solar cell with band-gap multiple-profiled intrinsic layer

摘要

In this work,hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) solar cells with a novel multiple-profiled structure in which the Ge content of the intrinsic layer changes in a substantial portion of the bulk have been designed.By comparing different types of profiling structure,the normal profiling structure combined with a high Ge content μc-SiGe:H layer,a Ge content grading layer and a μc-Si:H layer has been demonstrated.This structure exhibits higher short-circuit current density (Jsc) than conventional cell design with the same Ge content.As the result,an initial efficiency of 6.56％ (Jsc=23.8 mA/cm2,Voc=0.457 V,FF=0.602) has been achieved by μc-SiGe:H single junction solar cell with this novel cell structure.