SHALLOW JUNCTION FORMATION BY RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON WITH FLUORINE PREAMORPHIZATION

摘要

In this paper, we demonstrate that shallow junctions can be formed without ultra-low energy ion implantation machines. Preamorphization of silicon wafers with fluorine ions and rapid thermal annealing, can produce boron (10 keV implant) junctions shallower than 100 nm. Fluorine ions played a major role in this scheme. Alongside channeling suppression by the amorphous layer, fluorine interaction with vacancy-type defects during annealing, leads to uphill boron diffusion effect, shrinking the junction depth.