首页> 外文会议>2018 International Symposium on Devices, Circuits and Systems >Chemical bath deposited n-ZnO nanostructures on p-Si substrate for photo-detecting applications: Impact of annealing temperature
【24h】

Chemical bath deposited n-ZnO nanostructures on p-Si substrate for photo-detecting applications: Impact of annealing temperature

机译:在p-Si衬底上化学浴沉积的n-ZnO纳米结构用于光检测应用:退火温度的影响

获取原文
获取原文并翻译 | 示例

摘要

In this current work, the zinc oxide (ZnO) nanostructures are grown by employing chemical bath deposition (CBD) method. The as grown samples are annealed at 400°C and 600°C for 30 min in argon environment. A comparative study has been performed to study the systematic change of nanostructure morphology, chemical composition, crystallite structure and photo-sensing effects due to thermal annealing of the CBD grown ZnO nanostructure. The 400°C annealed sample exhibit nanosphere structure with significant enhancement in photo responsivity under UV illumination of 13mW/cm2at 365 nm. The present study suggests that the responsivity of the CBD grown ZnO nanostructure can be improved by thermal annealing at 400°C.
机译:在当前的工作中,通过采用化学浴沉积(CBD)方法生长氧化锌(ZnO)纳米结构。将所生长的样品在氩气环境中分别于400°C和600°C退火30分钟。已经进行了比较研究以研究由于CBD生长的ZnO纳米结构的热退火引起的纳米结构形态,化学组成,微晶结构和光敏效应的系统变化。经过400°C退火的样品在13mW / cm \ n 2 \ nat 365 nm。本研究表明,可通过在400°C下进行热退火来改善CBD生长的ZnO纳米结构的响应度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号