Centre for Research in Nanoscience Nanotechnology, University of Calcutta, Kolkata, India;
Centre for Research in Nanoscience Nanotechnology, University of Calcutta, Kolkata, India;
Department of Physics, Jadavpur University, Kolkata, India;
Department of Electronic Science, University of Calcutta, Kolkata, India;
Department of Electronic Science, University of Calcutta, Kolkata, India;
Zinc oxide; II-VI semiconductor materials; Annealing; Nanostructures; Chemicals; Morphology; Heterojunctions;
机译:调查热退火对化学浴沉积的SnO2 / P-Si异质结太阳能电池的光伏性能影响
机译:优化热退火温度:调整化学浴沉积法生长的p-CuO薄膜的光检测性能的技术路线
机译:用化学浴沉积法生长的N-ZnO纳米线/ P-Si和N- ZnO纳米线/对ZnO血管杂交型对比较光伏性能的研究
机译:化学浴沉积在P-Si基板上的N-ZnO纳米结构,用于光检测应用:退火温度的影响
机译:在肼溶液中在不锈钢基材上化学镀钯:镀液参数,沉积机理和沉积形态之间关系的研究。
机译:退火温度对化学浴镀(CBD)技术在低溶液浓度下沉积的CdS薄膜光学光谱的影响
机译:退火温度对P-Si衬底上纳米结构WO3薄膜的影响