首页> 外国专利> Electroless application of copper@ base coat to reinforced teflon substrate - by removing copper@ lining on substrates with caustic ammonia etching bath, purifying substrate, catalysing substrate, chemical copper@ plating, drying and annealing

Electroless application of copper@ base coat to reinforced teflon substrate - by removing copper@ lining on substrates with caustic ammonia etching bath, purifying substrate, catalysing substrate, chemical copper@ plating, drying and annealing

机译:化学镀铜@底漆到增强聚四氟乙烯基材上-通过使用苛性氨蚀刻浴去除基材上的铜@衬里,纯化基材,催化基材,化学镀铜,干燥和退火

摘要

Currentless coating of Cu-lined Teflon substrates (glass fibre reinforced or filled with ceramic powder) with a thin layer of Cu is effected by: (i) removal of the Cu-lining in a caustic ammonia etching bath, (ii) substrate purificn. using an alkaline purifying agent at 60-80 deg.C., (iii) catalysis of the substrate at 30-32 deg.C. for 12-14 min. using a Cu colloid-based catalyst, concn. 320-350 ml/l and pH 3.5 +/- 0.2, (iv) chemical Cu of the substrate at 220 +/- 1 deg.C. for 18-20 mins. using a Cu bath contg. 3 +/- 0.3 g/l Cu, 16-19 g/l Na0H and 16-18 ml/l 37% formaldehyde soln., and (v) drying and annealing the substrate at 140-180 deg.C. for at least 30 min. in an atmos. of N2. The substrate is rinsed between steps. Substrate purificn. is pref. at 60-62 deg.C. and drying and annealing pref. at 150 +/- 5 deg.C.. Rinsing of the substrate between steps by plunging into an overflow rinse both is at room temp. for 4-5 min.. USE - Used for mfg. of circuit line constructions having selected surge impendan
机译:通过以下方法实现无电流地对带有铜薄层的内衬铜的聚四氟乙烯基材(玻璃纤维增​​强或填充有陶瓷粉)进行涂覆:(i)在苛性氨蚀刻浴中去除铜衬,(ii)净化基材。在60-80℃下使用碱性净化剂,(iii)在30-32℃下催化底物。持续12-14分钟。使用基于铜胶体的催化剂concn。 320-350 ml / l和pH 3.5 +/- 0.2,(iv)在220 +/- 1℃下基材的化学铜。持续18-20分钟。使用铜浴续。 3 +/- 0.3 g / l的Cu,16-19 g / l的Na0H和16-18 ml / l的37%甲醛溶液,以及(v)在140-180℃下干燥和退火基材。至少持续30分钟。在大气中。 N2。在步骤之间漂洗基板。底物纯化。是首选。在60-62摄氏度并进行干燥和退火处理。在150 +/- 5℃下,在各步骤之间通过浸入溢流漂洗中的衬底的漂洗均在室温下进行。持续4-5分钟。USE-用于制造。选择浪涌阻抗的电路线路构造

著录项

  • 公开/公告号DE4113261A1

    专利类型

  • 公开/公告日1992-10-29

    原文格式PDF

  • 申请/专利权人 SIEMENS AG 8000 MUENCHEN DE;

    申请/专利号DE19914113261

  • 发明设计人 SATTLER DIETER 8000 MUENCHEN DE;

    申请日1991-04-23

  • 分类号C23C18/40;H05K3/02;C23C18/34;C23C18/44;G03F7/00;

  • 国家 DE

  • 入库时间 2022-08-22 05:25:36

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