Novel RRAM CMOS Non-Volatile Memory Cells in 130nm Technology

摘要

The scaling projection of RRAM requires a point by point comprehension of switching operations and the effect of the devices sizes on the reliability of the mechanism. RRAM compatibility with CMOS allows the innovation of novel structures benefiting from both technologies' characteristics. This paper presents a detailed overview on RRAM characteristics, with deep looking on the reliability over numerous cycles. After reviewing the switching processes, the IT-IR architecture will be explored, specifically in the field of programmable memory cells making RRAM a strong competitor among future memory solutions. 8TIR structure is proposed as a hybrid structure that improve the performance providing a latching mechanism and better access over the cell.