Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices

摘要

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (>SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) >sample-1(>8:>SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) >sample-2 (>8:>SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: >sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, >sample-2 is useful for resistive-switching random access memory application.