A novel approach to black titania fabrication via atomic layer deposition for energy storage

摘要

This work presents the first demonstration of atomic layer deposited (ALD) black titania (TiOx), to the best of our knowledge. By fabricating b-TiOx using ALD we have accomplished four distinct achievements: (1) development of a direct deposition method of b-TiOx, without need for deoxygenation annealing, as required by current fabrication processes; (2) the ability to deposit b-TiOx onto highly porous materials with Ångstrom-level precision; (3) increased response to the solar spectrum over TiOn₂n, as demonstrated by >10x improvement in detectable photocurrent when compared to TiOn₂n; (4) >7x improvement in capacitance when comparing a b-TiOx supercapacitor to a TiOn₂nsupercapacitor. As such, this work allows for more robust and precise black titania deposition, opening up new possibilities of devices based on b-TiOx.