A novel approach to black titania fabrication via atomic layer deposition for energy storage

摘要

This work presents the first demonstration of atomic layer deposited (ALD) black titania (TiOx), to the best of our knowledge. By fabricating b-TiOx using ALD we have accomplished four distinct achievements: (1) development of a direct deposition method of b-TiOx, without need for deoxygenation annealing, as required by current fabrication processes; (2) the ability to deposit b-TiOx onto highly porous materials with ?ngstrom-level precision; (3) increased response to the solar spectrum over TiO₂, as demonstrated by >10x improvement in detectable photocurrent when compared to TiO₂; (4) >7x improvement in capacitance when comparing a b-TiOx supercapacitor to a TiO₂supercapacitor. As such, this work allows for more robust and precise black titania deposition, opening up new possibilities of devices based on b-TiOx.