New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect

机译：针对2Xnm NAND闪存循环间隔时间效应的新HTDR现象研究

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.

机译：在本文中，我们详细探讨了HTDR（高温数据保留）和预循环条件之间的2Xnm NAND闪存关系。预循环间隔时间效应，无论在4Xnm还是2Xnm NAND闪存中都扮演着不同的角色。最后，根据实验数据，我们还探讨了有关物理机制的分析和讨论。

著录项

来源
《2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits》|2018年|1-4|共4页
会议地点 Singapore(SG)
作者
Huang Chia-Sheng; Ryoichi Ogino;
展开▼
作者单位

Powerchip Technology corporation, No.12,Li-Hsin Rd. 1,Hsinchu Science Park, Hsinchu, Taiwan, R.O.C;

Powerchip Technology corporation, No.12,Li-Hsin Rd. 1,Hsinchu Science Park, Hsinchu, Taiwan, R.O.C;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Flash memories; Integrated circuits; Tunneling; Reliability; Correlation; Temperature distribution; Degradation;

机译：闪存;集成电路;隧道;可靠性;相关性;温度分布;性能下降;;

相似文献

外文文献
中文文献
专利

1. The origin of oxide degradation during time interval between program/erase cycles in NAND Flash memory devices [J] . Chiu Yung-Yueh, Tsai Hung-Te-En, Chang Kai-Chieh, Japanese journal of applied physics . 2021,第7期

机译：NAND闪存设备中程序/擦除周期之间的时间间隔期间氧化物降解的起源
2. Impact of Program/Erase Cycling Interval on the Transconductance Distribution of NAND Flash Memory Devices [J] . Yung-Yueh Chiu, Kai-Chieh Chang, Hsin-Jyun Lin, Electron Devices, IEEE Transactions on . 2020,第11期

机译：程序/擦除循环间隔对NAND闪存设备跨导分布的影响
3. Fitting Cells Into a Narrow $V_{T}$ Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array [J] . Paolucci Giovanni Maria, Compagnoni Christian Monzio, Spinelli Alessandro S., Electron Devices, IEEE Transactions on . 2015,第5期

机译：使单元格适合狭窄的 $ V_ {T} $ 间隔：沿极端扩展NAND寿命的物理限制闪存阵列
4. New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect [C] . Huang Chia-Sheng, Ryoichi Ogino IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2018

机译：新的HTDR现象为2xnm NAND闪蒸循环间隔时间效应研究
5. Performance and Reliability Study and Exploration of NAND Flash-based Solid State Drives. [D] . Wu, Guanying. 2013

机译：基于NAND闪存的固态驱动器的性能和可靠性研究与探索。
6. Clocks for all seasons: unwinding the roles and mechanisms of circadianand interval timers in the hypothalamus and pituitary [O] . Shona Wood, Andrew Loudon -1

机译：所有季节的时钟：消除昼夜节律的作用和机制下丘脑和垂体中的时间间隔计时器
7. Atomistic Study of Lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash Memory [O] . Jixuan Wu, Jiezhi Chen, Xiangwei Jiang 2019

机译：3-D NAND闪存中程序/擦除循环期间横向电荷扩散劣化的原子研究
8. A Study of Clearance Intervals, Flashing Operation, and Left-Turn Phasing at Traffic Signals. Volume 2. Clearance Intervals [R] . Benioff, B. , Dock, F. C. , Carson, C. 1980

机译：交通信号中的间隙间隔，闪烁操作和左转相位的研究。第2卷。间隙间隔

New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect

摘要

著录项

相似文献

相关主题

期刊订阅