Study of Biased Temperature Instabilities in LDMOST technologies

机译：LDMOST技术中有偏温度不稳定性的研究

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Lots of studies have been dedicated to NBTI/PBTI in CMOS technologies, where the gate stack is most important. In this paper, we report our study of NBTI/PBTI in LDMOST technologies for RF Power applications. The observed BTI effect is associated to the backend of the processes.

机译：大量的研究致力于CMOS技术中的NBTI / PBTI，其中栅极堆叠最为重要。在本文中，我们报告了在LDMOST技术中用于射频功率应用的NBTI / PBTI研究。观察到的BTI效果与流程的后端相关。

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来源
《2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits》|2018年|1-4|共4页
会议地点 Singapore(SG)
作者
Guoqiao Tao; R. Koster; A. Romanescu; S. Theeuwen; R. van Dalen; H. Bosch; Tsung-Miau Wang; Shih-Yuan Chen; Yu-Fei Jhuang; Yung-Wen Cheng;
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作者单位

Ampleon Netherlands B.V., Nijmegen, the Netherlands;

Ampleon Netherlands B.V., Nijmegen, the Netherlands;

Ampleon Netherlands B.V., Nijmegen, the Netherlands;

Ampleon Netherlands B.V., Nijmegen, the Netherlands;

Ampleon Netherlands B.V., Nijmegen, the Netherlands;

Ampleon Netherlands B.V., Nijmegen, the Netherlands;

Integration Engineering Department, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan, R.O.C.;

Integration Engineering Department, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan, R.O.C.;

Integration Engineering Department, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan, R.O.C.;

Integration Engineering Department, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan, R.O.C.;

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原文格式 PDF
正文语种 eng
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关键词
Logic gates; Ions; Stress; Negative bias temperature instability; Thermal variables control; Metals; Radio frequency;

机译：逻辑门;离子;应力;负偏置温度不稳定性;热变量控制;金属;射频;;

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1. Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices [J] . B. Kojecky, V. Papez, D. Samal Microelectronics journal . 2006,第3期

机译：反向偏置半导体功率器件发生温度和时间不稳定的条件
2. Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO_2 Gate Dielectrics [J] . Motoyuki Sato, Satoshi Kamiyama, Takeo Matsuki, Japanese journal of applied physics . 2010,第4issue2期

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3. Influence of Body-Biasing, Supply Voltage, and Temperature on the Detection of Resistive Short Defects in FDSOI Technology [J] . Amit Karel, Mariane Comte, Jean-Marc Galliere, IEEE transactions on nanotechnology . 2017,第3期

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4. Study of Biased Temperature Instabilities in LDMOST technologies [C] . Guoqiao Tao, R. Koster, A. Romanescu, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2018

机译：在LDSMOSE技术中的偏置温度稳定性研究
5. Studies on Mixed Slab-Toroidal Electron Temperature Gradient Mode Instabilities in the Columbia Linear Machine [D] . Balbaky, Abed 2015

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7. Analog Circuit Design in PD-SOI CMOS Technology for High Temperatures up to 400°C using Reverse Body Biasing (RBB) [O] . Schmidt Alexander 2014

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8. High-Temperature-Turbine Technology Program: Phase II. Technology Test and Support Studies. Design and Development of the Liquid-Fueled High-Temperature Combustor for the Turbine Spool Technology Rig [R] . Morton, R. A., Garrett, C. M., Posey, J. S., 1981

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Study of Biased Temperature Instabilities in LDMOST technologies

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