首页> 外文会议>2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits >In-situ FIB PVC to Speed up Fault Isolation of Floating Metal-Insulator-Metal Capacitor Failure
【24h】

In-situ FIB PVC to Speed up Fault Isolation of Floating Metal-Insulator-Metal Capacitor Failure

机译:原位FIB PVC可以加快隔离浮动金属-绝缘子-金属电容器故障的速度

获取原文
获取原文并翻译 | 示例

摘要

Metal-Insulator-Metal (MIM) capacitor is one of the most common use passive component nowadays on semiconductor device. Unfortunately, its floating characteristic in semiconductor device make it difficult to further fault isolate to single faulty MIM capacitor within a group of MIM capacitor after remove the metal connection layer. A method to combine passive voltage contrast (PVC) analysis technique, focus ion beam (FIB) and platinum (Pt) coater is used to further localize the exact fail site on the defect MIM capacitor which will be presented in this paper.
机译:金属绝缘金属(MIM)电容器是当今半导体器件上最常用的无源元件之一。不幸的是,其在半导体器件中的浮动特性使得在去除金属连接层之后难以进一步故障隔离到一组MIM电容器中的单个故障MIM电容器。本文将结合无源电压对比(PVC)分析技术,聚焦离子束(FIB)和铂(Pt)镀膜机的一种方法来进一步定位缺陷MIM电容器上的确切故障部位。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号