Columbia University, New York, NY, 10027, United States;
Columbia University, New York, NY, 10027, United States;
Columbia University, New York, NY, 10027, United States;
Columbia University, New York, NY, 10027, United States;
Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, RepublicofKorea;
Columbia University, New York, NY, 10027, United States;
Columbia University, New York, NY, 10027, United States;
Resistance; Contact resistance; Fabrication; Platinum; Field effect transistors;
机译:通过二维材料的范德华接触将N型和p型载流子注入WSe2
机译:通过Ar +离子束产生的表面缺陷增强二维p型WSe2晶体管的低电阻接触并提高迁移率
机译:p型InP的高度可靠的基于Pd的欧姆接触
机译:可靠的优质金属嵌入式H-BN触点P型WSE2
机译:用于高性能WSe2和MoS2晶体管的二维低电阻触点。
机译:Ni与金属嵌入纳米粒子接触4H-SiC的取决于金属功函数的势垒高度
机译:用范德华接触将N-和p-型载体注入Wse2 二维材料
机译:半导体电极。 31.在水溶液中具有n型和p型Wse2的光电化学和光伏系统