Analytical study of double gate MOSFET: A design and performance perspective

摘要

This paper presents an in depth study and analysis which shows that the Double gate MOSFET has emerged as one of the most favorable devices due to short channel effect immunity, off-current reduction ability and more scaling possibility. The devices with less than 0.1 μm gate length can maintain near ideal subthreshold factor. This paper also presents some new modifications in the existing devices, in order to keep up with the performance improvements, such as Asymmetric Undoped Double gate MOSFET, Symmetric and Asymmetric Underlap Double gate MOSFET, high K TMDG MOSFET, high K Spacer Asymmetric Underlap Double gate MOSFET, Graded Channel Double gate MOSFET and Dual-insulator Double gate MOSFET.