Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
Power Device Development Division, Sumitomo Electric Industries, Ltd., Osaka, Japan;
机译:累积模式场效应晶体管:新型超低导通电阻MOSFET
机译:具有低导通电阻和开关损耗的改进型4H-SiC沟道栅MOSFET
机译:具有低导通电阻和高开关速度的下一代平面1700 V,20mΩ4H-SiC DMOSFET
机译:具有优化结场效应晶体管区域的13-kV SiC MOSFET的低电阻和快速切换
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:使用热致发光(TLD)和金属氧化物半导体场效应晶体管(MOSFET)剂量计对颌面区域进行有效剂量评估:一项比较研究
机译:快速切换平面电源模块,具有SiC MOSFET和超低寄生电感
机译:与ssC电路设计相关的辐射对结型场效应晶体管(JFETs),mOsFET和双极晶体管的影响。