机译:具有低导通电阻和开关损耗的改进型4H-SiC沟道栅MOSFET
Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China;
KTH Royal Inst Technol, Sch Elect Engn & Comp Sci EECS, SE-16440 Kista, Sweden;
Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China;
Xi An Jiao Tong Univ, Dept Microelect, Xian 710049, Shaanxi, Peoples R China|Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong, Peoples R China;
Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Heilongjiang, Peoples R China;
Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 700049, Shaanxi, Peoples R China;
Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China;
Breakdown voltage; ON-resistance; silicon carbide; switching energy loss; U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs);
机译:具有低导通电阻和高开关速度的下一代平面1700 V,20mΩ4H-SiC DMOSFET
机译:具有低导通电阻和降低的栅极电荷的改进的4H-SiC沟槽栅极MOSFET结构
机译:用于设计具有低导通电阻和鲁棒性的3300-V级4H-SiC注入-外延MOSFET的新型边缘终端和电流扩散层的改进仿真模型
机译:用于低导通电阻和开关损耗的3.3kV 4H-SiC Semi-SJ MOSFET
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:4H-SIC双沟MOSFET采用分流异质结闸,用于改善开关特性