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Interconnect performance and scaling strategy at the 5 nm Node

机译:5 nm节点处的互连性能和缩放策略

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摘要

In this paper, major challenges for 5 nm node BEOL performance are presented. High wire resistance is a key issue for interconnect delay. Accordingly, we focus on potential wire resistance reduction with various architectures and materials. Copper liner thickness was identified as the major knob for increasing Cu areal percent, as compared to increased line aspect ratio and width. Interconnect delay variability is reviewed and analyzed with respect to various patterning techniques.
机译:在本文中,提出了5 nm节点BEOL性能的主要挑战。高导线电阻是互连延迟的关键问题。因此,我们专注于采用各种架构和材料降低潜在的导线电阻。与增加的线宽比和宽度相比,铜衬里的厚度被认为是增加Cu面积百分比的主要纽扣。关于各种图案化技术,对互连延迟可变性进行了回顾和分析。

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