Power Components Branch, Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA;
Power Components Branch, Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA;
Power Components Branch, Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA;
Silicon carbide; MOSFET; Logic gates; Silicon; Robustness; Stress; Power conversion;
机译:SiC MOSFET的短路鲁棒性测试
机译:SiC MOSFET的短路鲁棒性测试和深入的微观结构分析研究
机译:逆行通道的短路稳健性掺杂1.2 kV SiC MOSFET
机译:SIC MOSFET的短路鲁棒性测试
机译:6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
机译:负栅偏置SiC MOSFET的辐射响应
机译:SiC MOSFET的短路鲁棒性研究,故障模式分析以及与BJT的比较