Influence of growth temperature on site competition effects during chemical vapor deposition of 4H-SiC layers

摘要

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C-SiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition effects. We observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were performed in “low temperature” (LT) or “high temperature” (HT) regime. Partial explanation of observed phenomena basing on thermal evolution of carbon coverage of SiC surface is proposed.